收藏本站
Data
W631GG6KB
Table 41 – I DD1 Measurement-Loop Pattern 1
2
0
1, 2
3, 4
ACT
D, D
D#, D#
0
1
1
0
0
1
1
0
1
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
-
-
-
...
Repeat pattern 1...4 until nRCD - 1, truncate if necessary
nRCD
RD
0
1
0
1
0
0
0
0
0
0
0
00000000
...
Repeat pattern 1...4 until nRAS - 1, truncate if necessary
nRAS
PRE
0
0
1
0
0
0
0
0
0
0
0
-
0
...
1*nRC+0
Repeat pattern 1...4 until nRC - 1, truncate if necessary
ACT 0 0 1 1 0 0 0 0
0
F
0
-
1*nRC+1, 2
1*nRC+3, 4
D, D
D#, D#
1
1
0
1
0
1
0
1
0
0
0
0
0
0
0
0
0
0
F
F
0
0
-
-
...
Repeat pattern nRC + 1,...,4 until nRC + nRCD - 1, truncate if necessary
1*nRC+nRCD
RD
0
1
0
1
0
0
0
0
0
F
0
00110011
...
Repeat pattern nRC + 1,...,4 until nRC + nRAS - 1, truncate if necessary
1*nRC+nRAS
PRE
0
0
1
0
0
0
0
0
0
F
0
-
...
Repeat pattern nRC + 1,...,4 until 2*nRC - 1, truncate if necessary
1
2
3
4
5
6
7
2*nRC
4*nRC
6*nRC
8*nRC
10*nRC
12*nRC
14*nRC
Repeat Sub-Loop 0, use BA[2:0] = 1 instead
Repeat Sub-Loop 0, use BA[2:0] = 2 instead
Repeat Sub-Loop 0, use BA[2:0] = 3 instead
Repeat Sub-Loop 0, use BA[2:0] = 4 instead
Repeat Sub-Loop 0, use BA[2:0] = 5 instead
Repeat Sub-Loop 0, use BA[2:0] = 6 instead
Repeat Sub-Loop 0, use BA[2:0] = 7 instead
Notes:
1. DM must be driven LOW all the time. DQS, DQS# are used according to RD Commands, otherwise MID-LEVEL.
2. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Publication Release Date: Dec. 09, 2013
Revision A05
- 127 -
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
W9412G6IH-5 IC DDR-400 SDRAM 128MB 66TSSOPII
W9412G6JH-5I IC DDR SDRAM 128MBIT 66TSOPII
W9425G6EH-5 IC DDR-400 SDRAM 256MB 66TSSOPII
W9425G6JH-5I IC DDR SDRAM 256MBIT 66TSOPII
W947D2HBJX5E IC LPDDR SDRAM 128MBIT 90VFBGA
W948D2FBJX5E IC LPDDR SDRAM 256MBIT 90VFBGA
W949D2CBJX5E IC LPDDR SDRAM 512MBIT 90VFBGA
W971GG6JB25I IC DDR2 SDRAM 1GBIT 84WBGA
相关代理商/技术参数
W631GG8KB-11 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W631GG8KB-12 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR3 SDRAM 1G-Bit 128Mx8 1.5V 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W631GG8KB-15 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W632 制造商:LUMINIS 制造商全称:LUMINIS 功能描述:Wall mount
W632GG6KB-11 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 2GBIT 96WBGA
W632GG8KB-11 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 2GBIT 78WBGA
W634 制造商:LUMINIS 制造商全称:LUMINIS 功能描述:Wall mount
W638 制造商:LUMINIS 制造商全称:LUMINIS 功能描述:Wall mount